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Home > Electronic Components > Infineon vs. CREE 6 Amp SiC Schottky Diode Teardown and Technology Analysis
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Infineon vs. CREE 6 Amp SiC Schottky Diode Teardown and Technology Analysis
- Published by: MuAnalysis
- Published: February, 2008
- Format : PDF /
- Delivery: E-Mail within 1-2 business days
- Product ID: 79905
Description
Abstract
These devices may look the same and be interchangeable in your product but inside they have widely different technologies. MuAnalysis has used a large variety of analytical techniques including Optical Beam Induced Current (OBIC), electron microscopy as well as Raman and FTIR spectroscopy to probe the insides of these high power diodes and reveal their secrets. Schottky contact, passivation, edge structure, back contact, crystalline orientation are described in details with plenty of photos.
Table of Contents
Table of Contents
1. Product Identification
2. External appearance and Principal Dimensions
3. Package
- Encapsulation
- Leadframe structure and material
- Die attach
- Wirebonding
4. Semiconductor Die
- Dimensions, Thickness, Die photo
- Materials and Structure
- Substrate/epi-layer
- Schottky contact
- Passivation
- Edge structure
- Back contact
5. Electronic Structure
- OBIC Analysis
- Raman Spectroscopy
6. Summary
