Ericsson dTRU GSM/EDGE 900MHz Model KRC 131 1002/2 R5F

Abstract

Design Analysis Ericsson GSM900MHz dTRU Radio Transceiver.

This report covers the design analysis of an Ericsson GSM900MHz radio transceiver unit. This unit is part of the RBS2x06 GSM base station platform. The unit was manufactured in Q2 2008.

Component and semiconductor suppliers mentioned in this report include: Analog Devices, Anaren Microwave, Altera, Epcos AG, Fairchild Semiconductor, Freescale Semiconductor, Hitachi Metals, Infineon Technologies, International Rectifier, Kemet, Maxim Integrated Products, Murata Electronics Co., Ltd., National Semiconductor, NDK, NXP Semiconductors, ON Semiconductor, Pulse Engineering, Skyworks Solutions, STMicroelectronics, Texas Instruments, and Vishay Siliconix.

• Complete Part Number/Marking
• Component Manufacturer Identification
• Function Component Description
• Package Type

Important Note: There is NO component pricing contained within the report.

Table of Contents

EXECUTIVE SUMMARY

• Active/Passive Component Summary
• Important Note:

CHAPTER 1: RBS 2X06 SYSTEM

• 1.1 Overview of Ericsson Expander RBS and dTRU

CHAPTER 2: MECHANICAL ANALYSIS

• 2.1 Mechanical Analysis

CHAPTER 3: SUBSYSTEM

• Area A: Transceiver Baseband Processing
• Area B: Transceiver Power Management
• Area C: Transceiver Tx Section
• Area C1A
• Area C1B
• RYT 902 6062/10 R1A
• Area D: Transceiver Rx Section
• RYT 902 6062/3 R1B
• Area E: Antenna Diversity Switching and LNA
• Area F: High Power RF Output
• Area G: Baseband PLL Section
• Area H

APPENDIX A - PASSIVE CASE SIZE ANALYSIS

APPENDIX B - ACTIVE COMPONENT MARKET SHARE ANALYSIS

TABLES

• Table 1: Area A Bill of Materials
• Table 2: Area B Bill of Materials
• Table 3: Area C Bill of Materials
• Table 4; Area C1A Bill of Materials
• Table 5: Area C1B Bill of Materials
• Table 6: RYT 902 6062/10 R1A Bill of Materials
• Table 7: Area D, D1A, D2A Bill of Materials
• Table 8: Area D, D1B D2B Bill of Materials
• Table 9: RYT 902 6062/3 R1B Bill of Materials
• Table 10: Area E Bill of Materials
• Table 11: Area F Bill of Materials
• Table 12: Area G Bill of Materials
• Table 13: Area H Bill of Materials
• Table 14: Passive Component Case Size Distribution by System Subsection
• Table 15: Identified Passive Component Supplier Distribution by System Subsection
• Table 16: Active/Passive Component Distribution by System Subsection
• Table 17: Active Semiconductor Vendor Distribution by System Subsection

EXHIBITS

• Exhibit 1: Generic GSM Base Station Diagram
• Exhibit 2: dTRU Faceplate Layout and Dimensions
• Exhibit 3: dTRU Front and Rear View
• Exhibit 4: dTRU Heat Sink Plastic Cover
• Exhibit 5: Top View of dTRU with RF Shielding
• Exhibit 6: dTRU RF Shield, Internal View
• Exhibit 7: dTRU Heat Sink Mechanical Dimensions, Side View
• Exhibit 8: dTRU Heat Sink, Top View
• Exhibit 9: dTRU Heat Sink, Bottom View
• Exhibit 10: dTRU Transceiver System Printed Circuit Board (Top View)
• Exhibit 11: dTRU Transceiver System Printed Circuit Board (Bottom View)
• Exhibit 12: Area A Component Diagram
• Exhibit 13: Area B Component Diagram
• Exhibit 14: RF Power Transistor Clamp Assembly
• Exhibit 15: dTRU Tx Amplifier Chain
• Exhibit 16: Area C Component Diagram
• Exhibit 17: Area C1A Component Diagram
• Exhibit 18: Area C1B Component Diagram
• Exhibit 19: RYT 902 6062/10 R1A Component Diagram
• Exhibit 20: Area D, D1A, D2A Component Diagram
• Exhibit 21: Area D, D1B, D2B Component Diagram
• Exhibit 22: RYT 902 6062/3 R1B Component Diagram
• Exhibit 23: Area E Component Diagram
• Exhibit 24: Area F Component Diagram
• Exhibit 25: Area G Component Diagram
• Exhibit 26: Area H Component Diagram
• Exhibit 27: Passive Component Case Size Distribution
• Exhibit 28: Identified Passive Component Market Share by Vendor
• Exhibit 29: Active Semiconductor Component Share
• Exhibit 30: Active Semiconductor Market Share by Vendor
• Exhibit 31: High Pin Count (64+) Active Semiconductor Market Share by Vendor